Chapter 1 — Introduction and Scope
This manual covers remote switching of antenna parasitic elements (directors and reflectors) to change the radiation pattern of Yagi-Uda and phased arrays. Four switching technologies are covered: PIN diode RF switching (70 cm through 23 cm), bias-T DC injection (for remote power), RF isolation filters, and relay sequencer (HF and VHF use). The ESP32 controller manages switching sequences, CYD display, and BLE remote control.
Chapter 2 — Theory of Operation
2-1 PIN Diode RF Switch
A PIN (p-intrinsic-n) diode has a wide intrinsic region that stores minority carriers under forward bias. Under forward bias (15–50 mA): the diode becomes a small resistance (<0.5Ω), passing RF. Under reverse bias (−5–−20V): the carriers sweep out and the diode becomes a small capacitor (<0.2 pF), blocking RF.
For parasitic element switching: the element is connected to the boom through the PIN diode. Forward bias connects the element (director mode); reverse bias opens the circuit (the element is now a passive wire, which shortens effective reflector length).
2-2 Bias-T for Remote Control
The PIN diode bias current is injected onto the coaxial feedline through a bias-T at the feed point. A high-impedance choke (RFC, >1 kΩ at operating frequency) in series with the bias supply passes DC but blocks RF. At the element, the reverse bias circuit is isolated by capacitors in the RF path.
2-3 Relay Sequencer for TX/RX Switching
During transmit, the sequencer ensures: (1) preamp is bypassed BEFORE (2) transmit relay closes BEFORE (3) PA is keyed. Reverse on receive. This prevents preamp burnout from TX power leakage.
Chapter 3 — Equipment and Materials
| Component | VHF/UHF PIN switch | Relay sequencer |
|---|---|---|
| Switch diode | MA4P504 or HSMP-3814 (SOT-23) | — |
| RF choke | 47–100 nH SMD (0402) | 1–10 µH toroid |
| Bias voltage | +12V (fwd) / −5V (rev) | 12V relay coil |
| Isolation capacitor | 100 pF NP0 (0402) | — |
| Control transistor | 2N2222 or BC817 | 2N2222 + relay |
| Controller | ESP32 WROOM-32 | ESP32 WROOM-32 |
| Relay (sequencer) | — | Omron G2RL-1, 12V |
| Sequencer delay | — | 10–50 ms between steps |
Chapter 4 — Construction
4-1 PIN Diode Element Switch (70 cm)
- Mount MA4P504 diode on a small PCB (10×10 mm) at the element attachment point on the boom. Orient cathode toward the bias supply, anode toward the element.
- Wire the RF choke (47 nH SMD) in series between the bias supply conductor and the cathode. This prevents RF from entering the bias circuit.
- Connect 100 pF NP0 capacitor in series with the RF path (between boom and element) to block DC while passing RF.
- Run a twisted pair (bias supply and return) along the boom to the controller box. Use shielded twisted pair for runs >300 mm.
4-2 Relay Sequencer
- Connect Relay 1 (preamp bypass) to ESP32 GPIO with a 2N2222 driver. Relay 2 (TX/RX antenna relay) to a second GPIO + driver.
- On PTT input (low = key): fire Relay 1 (bypass preamp) after 10 ms delay; fire Relay 2 (TX relay) after another 20 ms delay. Then assert PA key output.
- On PTT release: de-assert PA key; wait 20 ms; release Relay 2; wait 10 ms; release Relay 1 (reconnect preamp).
Chapter 5 — Operating Procedures
- Select antenna pattern via CYD touchscreen or BLE remote. The ESP32 sets the correct PIN diode bias states for the chosen pattern (cardioid, broadside, endfire, or omnidirectional).
- Pattern switching may occur on receive only; switching during transmit is not recommended (momentary impedance mismatch during transition).
- Inspect all bias-T connections at antenna installation and after any storm. Water ingress at a bias-T can short the bias supply, permanently forward-biasing one PIN diode and locking the pattern.
Chapter 6 — Calibration
- Verify PIN diode states: with a NanoVNA and TinySA, measure S21 through each switched element. Forward-biased: S21 must be <−0.5 dB (low loss connected state). Reverse-biased: S21 must be <−35 dB (high isolation open state).
- Sequencer timing: measure delay between PTT closure and TX relay closure with an oscilloscope. Must be ≥20 ms to protect the preamp.
Chapter 7 — Verification and Acceptance
- PIN diode insertion loss (forward bias) <0.5 dB at operating frequency.
- PIN diode isolation (reverse bias) ≥35 dB at operating frequency.
- Pattern repeatability: switching to the same pattern twice should give the same S21 phase through each element within ±5°.
- Sequencer: TX relay must not close before preamp bypass relay; verified with dual-trace oscilloscope measuring each relay coil drive.
- Log: date, diode types, forward loss, reverse isolation, sequencer timing, pattern repeat error, operator.
Appendix A — PIN Diode Bias Current vs. Loss
| Forward bias current | Diode resistance (MA4P504) | Insertion loss (70cm) |
|---|---|---|
| 5 mA | 2.0 Ω | 0.7 dB |
| 15 mA | 0.7 Ω | 0.5 dB |
| 30 mA | 0.3 Ω | 0.4 dB |
| 50 mA | 0.15 Ω | 0.35 dB |
Appendix B — TX/RX Sequencer State Table
| Time | PTT | Preamp bypass relay | TX relay | PA key |
|---|---|---|---|---|
| t=0 | ASSERTED | OFF (preamp active) | OFF (RX path) | OFF |
| t=10ms | ASSERTED | ON (preamp bypassed) | OFF | OFF |
| t=30ms | ASSERTED | ON | ON (TX path) | OFF |
| t=40ms | ASSERTED | ON | ON | ON (transmitting) |
| t=release | RELEASED | ON | ON | OFF |
| t+20ms | RELEASED | ON | OFF (RX path) | OFF |
| t+30ms | RELEASED | OFF (preamp active) | OFF | OFF |